Three-dimensional magnetic memory

ABSTRACT

Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.

RELATED APPLICATIONS

This non-provisional patent application is a continuation of U.S. patentapplication Ser. No. 11/615,618 filed on Dec. 22, 2006, which isincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention is related to the field of memories and, in particular, toa three-dimensional magnetic memory comprised of a stack of data storagelayers. More particularly, the three-dimensional magnetic memory allowsfor the transfer of bits between the data storage layers.

2. Statement of the Problem

Solid-state memory is a nonvolatile storage medium that uses no movingparts. Some examples of solid-state memory are flash memory and MRAM(magnetoresistive random access memory). Solid-state memories provideadvantages over conventional disk drives in that data transfers to andfrom solid-state memories take place at a much higher speed than ispossible with electromechanical disk drives. Solid-state memories mayalso have a longer operating life and may be more durable due to thelack of moving parts. One problem with traditional solid-state memoriesis that storage capacity is much less than can be achieved withelectromechanical disk drives. For instance, a common flash memory canstore up to approximately 1 gigabyte (GB), whereas a common hard drivecan store up to 100 GB or more. The cost per megabyte is higher forsolid-state memories than for electromechanical disk drives.

Solid-state memories have a size that is determined by a minimum featuresize (F). One problem with solid-state magnetic memories (as opposed toflash memory) is the cell density of the memory. A typical solid-statemagnetic memory has a cell size that is large compared to flash memoriesdue to the nature of magnetic fields from current lines extending over atypical 4 F distance range. For instance, an MRAM may have a cell sizeof 32 F² while a flash memory may have a cell size of 4 F². The largercell size of solid-state magnetic memories unfortunately relates to areduced cell density.

It may thus be desirable to design solid-state magnetic memories thathave reduced cell size.

SUMMARY OF THE SOLUTION

The invention solves the above and other related problems with athree-dimensional solid-state magnetic memory. The three-dimensionalmagnetic memory includes a plurality of stacked data storage layerswhere each data storage layer is adapted to store bits of data. The bitscan be transferred between the data storage layers as desired. By usingstacked data storage layers to form a three-dimensional magnetic memory,the net cell size is advantageously reduced which allows for increasedcell density. For instance, assume a two-dimensional magnetic memoryinitially has a cell size of 16 F². If the magnetic memory isimplemented with four stacked data storage layers as described hereininstead of one data storage layer, then the effective cell size can bereduced to 4 F². If the magnetic memory is implemented with sixteenstacked data storage layers as described herein instead of one datastorage layer, then the effective cell size can be reduced to 1 F². Thethree-dimensional magnetic memory as described herein can advantageouslycompete with flash memories and disk drives in terms of cell density (orbit density).

One embodiment of the invention is a magnetic memory having stacked datastorage layers. The magnetic memory includes a first storage stackincluding a first data storage layer defining a first plane. The stackis a sequence of thin films, deposited one on top of another, and formsa fundamental building block of the magnetic memory described herein.The magnetic memory further includes a second storage stack proximate tothe first storage stack, where the second storage stack includes asecond data storage layer defining a second plane that is parallel tothe first plane. The first plane and the second plane are in the X-Ydirection, and the data storage layers are thus stacked in the Zdirection. The magnetic memory may further include a third storage stackproximate to the second storage stack, where the third storage stackincludes a third data storage layer defining a third plane that isparallel to the second plane. The magnetic memory may further include afourth storage stack, a fifth storage stack, etc, depending on desiredimplementations.

The magnetic memory further includes a plurality of write elementsproximate to the first data storage layer. The write elements areadapted to apply magnetic fields to the first data storage layer tocreate a plurality of magnetic domains in the first data storage layer.The magnetic domains represent a plurality of bits being stored in thefirst data storage layer. The magnetic memory further includes a controlsystem adapted to heat the second data storage layer so that magneticfields from the magnetic domains in the first data storage layer imprintthe magnetic domains in the second data storage layer. By imprinting themagnetic domains into the second data storage layer, the bits are copiedfrom the first data storage layer to the second data storage layer.

The control system may be adapted to transfer the bits between the datastorage layers of the magnetic memory as desired. For instance, thecontrol system may be further adapted to heat a third data storage layerso that magnetic fields from the magnetic domains in the second datastorage layer imprint the magnetic domains in the third data storagelayer. By imprinting the magnetic domains into the third data storagelayer, the bits are copied from the second data storage layer to thethird data storage layer. The control system may be further adapted totransfer the bits in the other direction, such as from the third datastorage layer to the second data storage layer, and from the second datastorage layer to the first data storage layer.

In another embodiment, the magnetic memory further includes a firstintermediate stack between the first storage stack and the secondstorage stack, and a second intermediate stack between the secondstorage stack and the third storage stack, where the first intermediatestack includes a first intermediate storage layer and the secondintermediate stack includes a second intermediate storage layer. To copythe bits from the first data storage layer to the second data storagelayer, the control system is adapted to heat the second data storagelayer above its Curie temperature and to heat the first intermediatestorage layer below its Curie temperature. With the first intermediatestorage layer heated, magnetic fields from the magnetic domains in thefirst data storage layer imprint the magnetic domains in the firstintermediate storage layer. The control system is further adapted toallow the first intermediate storage layer to cool, and then to allowthe second data storage layer to cool, which stores the magnetic domainsin the first intermediate storage layer. The control system is thenfurther adapted to heat the second intermediate storage layer above itsCurie temperature and to heat the second data storage layer below itsCurie temperature. With the second intermediate storage layer heated,magnetic fields from the magnetic domains in the first intermediatestorage layer imprint the magnetic domains in the second data storagelayer. The control system is further adapted to allow the second datastorage layer to cool, and then to allow the second intermediate storagelayer to cool, which stores the magnetic domains in the second datastorage layer.

In another embodiment, the magnetic memory further includes a pluralityof read elements proximate to the first data storage layer. The readelements are adapted to sense magnetic fields from the magnetic domainsin the first data storage layer to read the bits from the first datastorage layer.

In another embodiment, the magnetic memory further includes an overflowstorage system adapted to temporarily store the bits read from the firstdata storage layer.

In another embodiment, the first data storage layer is patterned intostrips. The locations of the strips correspond with the magnetic domainsin the first data storage layer. The second data storage layer is alsopatterned into strips, where the locations of the strips correspond withthe magnetic domains in the second data storage layer. The strips of thesecond data storage layer are orthogonal to the strips of the first datastorage layer. The strips of successive data storage layers in themagnetic memory are orthogonal to one another to control the size of themagnetic domains.

In another embodiment, the first storage stack includes a first heatinglayer and a first insulating layer in addition to the first data storagelayer. The first heating layer is adapted to heat the first data storagelayer. The first heating layer comprises cross-hatched conductors, whereintersection points of the cross-hatched conductors correspond with thelocations of the magnetic domains in the first data storage layer. Inanother embodiment, the widths of the cross-hatched conductors arenarrower at the intersection points as compared to the widths of thecross-hatched conductors between the intersection points.

The invention may include other exemplary embodiments described below.

DESCRIPTION OF THE DRAWINGS

The same reference number represents the same element on all drawings.

FIG. 1 is a cross-sectional view of a magnetic memory in an exemplaryembodiment of the invention.

FIG. 2 is a top view of read elements in the magnetic memory of FIG. 1in an exemplary embodiment of the invention.

FIG. 3 is a top view of write elements in the magnetic memory of FIG. 1in an exemplary embodiment of the invention.

FIG. 4 is a flow chart illustrating a method of writing bits to themagnetic memory of FIG. 1 in an exemplary embodiment of the invention.

FIG. 5 is an isometric view of a portion of a first data storage layerillustrating bits written to the first data storage layer in anexemplary embodiment of the invention.

FIG. 6 illustrates the magnetic memory with bits written into the firstdata storage layer in an exemplary embodiment of the invention.

FIG. 7 illustrates the magnetic memory with the bits copied from thefirst data storage layer to a second data storage layer in an exemplaryembodiment of the invention.

FIG. 8 illustrates the magnetic memory with the bits copied from thesecond data storage layer to a third data storage layer in an exemplaryembodiment of the invention.

FIG. 9 illustrates a cross-sectional view of another embodiment of amagnetic memory where the magnetic memory also includes intermediatestacks.

FIG. 10 is a flow chart illustrating a method of writing bits to amagnetic memory in an exemplary embodiment of the invention.

FIG. 11 is a flow chart illustrating a method of reading bits from themagnetic memory in an exemplary embodiment of the invention.

FIG. 12 illustrates the magnetic memory with the bits stored in thethird data storage layer in an exemplary embodiment of the invention.

FIG. 13 illustrates the magnetic memory with the bits copied from thesecond data storage layer to a first data storage layer in an exemplaryembodiment of the invention.

FIG. 14 illustrates a cross-sectional view of another embodiment of amagnetic memory where the magnetic memory also includes intermediatestacks.

FIG. 15 is a flow chart illustrating a method of reading bits from amagnetic memory in an exemplary embodiment of the invention.

FIG. 16 illustrates the magnetic memory that includes an overflowstorage system in an exemplary embodiment of the invention.

FIG. 17 illustrates a storage stack that includes a heating layer in anexemplary embodiment of the invention.

FIG. 18 is a top view of a heating layer comprising cross-hatchedconductors in an exemplary embodiment of the invention.

FIG. 19 illustrates the first data storage layer as patterned in anexemplary embodiment of the invention.

FIG. 20 illustrates the second data storage layer as patterned in anexemplary embodiment of the invention.

FIG. 21 is a flow chart illustrating a method of fabricating a magneticmemory in an exemplary embodiment of the invention.

FIG. 22 is a flow chart illustrating a method of fabricating a storagestack in an exemplary embodiment of the invention.

FIG. 23 is a flow chart illustrating a method of patterning data storagelayers in an exemplary embodiment of the invention.

FIG. 24 is a cross-sectional view of a more detailed embodiment of amagnetic memory in an exemplary embodiment of the invention.

FIG. 25 illustrates the magnetic memory of FIG. 24 with a page of bitswritten into a first data storage layer in an exemplary embodiment ofthe invention.

FIG. 26 illustrates the magnetic memory of FIG. 24 with the page of bitsimprinted into a second data storage layer in an exemplary embodiment ofthe invention.

FIG. 27 illustrates the magnetic memory of FIG. 24 with the page of bitswritten into a third data storage layer in an exemplary embodiment ofthe invention.

FIG. 28 illustrates the magnetic memory of FIG. 24 with the page of bitserased from the first data storage layer in an exemplary embodiment ofthe invention.

FIG. 29 illustrates the magnetic memory of FIG. 24 with the page of bitswritten into a fourth data storage layer in an exemplary embodiment ofthe invention.

FIG. 30 illustrates the magnetic memory of FIG. 24 with the page of bitserased from the second data storage layer in an exemplary embodiment ofthe invention.

FIG. 31 illustrates the magnetic memory of FIG. 24 with another page ofbits written into the first data storage layer in an exemplaryembodiment of the invention.

FIG. 32 illustrates the first data storage layer as patterned in anotherexemplary embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

FIGS. 1-32 and the following description depict specific exemplaryembodiments of the invention to teach those skilled in the art how tomake and use the invention. For the purpose of teaching inventiveprinciples, some conventional aspects of the invention have beensimplified or omitted. Those skilled in the art will appreciatevariations from these embodiments that fall within the scope of theinvention. Those skilled in the art will appreciate that the featuresdescribed below can be combined in various ways to form multiplevariations of the invention. As a result, the invention is not limitedto the specific embodiments described below, but only by the claims andtheir equivalents.

FIG. 1 is a cross-sectional view of a magnetic memory 100 in anexemplary embodiment of the invention. The cross-sectional view in FIG.1 only shows a portion of magnetic memory 100, as an actual magneticmemory may extend further in the X, Y, or Z direction. Magnetic memory100 includes a main column 101 of layers comprising a plurality of readelements 102, a plurality of write elements 104, a first storage stack110, a second storage stack 120, and a third storage stack 130. Magneticmemory 100 also includes a control system 150 that may be comprised of aplurality of transistors and other elements. Although one main column101 of layers is shown in FIG. 1, magnetic memory 100 may include aplurality of main columns as shown in FIG. 1. For instance, if the maincolumn 101 shown in FIG. 1 provides 4 Mbits of storage (such as 2K inthe X-direction and 2K in the Y direction), then magnetic memory 100 mayinclude a plurality of main columns 101 as shown in FIG. 1 to provide 16Mbits, 32 Mbits, 64 Mbits, etc.

Read elements 102 and write elements 104 are proximate to storage stack110, storage stack 110 is proximate to storage stack 120, and storagestack 120 is proximate to storage stack 110 and storage stack 130. Beingproximate means that one stack is adjacent or adjoining another stack.There may be more or less storage stacks in magnetic memory 100 that arenot illustrated in this embodiment. For instance, magnetic memory 100may include a fourth storage stack, a fifth storage stack, etc. Theremay also be intermediate layers between storage stacks 110, 120, and130. These intermediate layers may be used to facilitate the transfer ofbits between the storage stacks, which will be illustrated in FIGS.9-10.

A storage stack comprises any subset of layers adapted to store bits ofdata. Storage stack 110 includes one or more layers of material. One ofthe layers of storage stack 110 comprises a data storage layer 112,which is a layer of magnetic material adapted to store bits. Datastorage layer 112 may be comprised of magnetic material having aperpendicular magnetization, such as a TbFeCo, CoPt, or CoPd multilayer.Data storage layer 112 may alternatively be comprised of magneticmaterial having a horizontal magnetization or a non-perpendicularmagnetization. Storage stack 110 may also include one or more insulatinglayers 114 adapted to insulate heating of data storage layer 112 fromother data storage layers. Storage stack 110 may also include a heatinglayer (not shown) adapted to heat data storage layer 112. Storage stack120 may have a similar configuration as storage stack 110 having a datastorage layer 122, an insulating layer 124, and possibly a heatinglayer. Storage stack 130 may have a similar configuration as storagestack 110 with a data storage layer 132, an insulating layer 134, andpossibly a heating layer.

Data storage layer 112 of storage stack 110 defines a first plane in theX-Y direction. Data storage layer 122 of storage stack 120 defines asecond plane in the X-Y direction. Data storage layer 132 of storagestack 130 defines a third plane in the X-Y direction. As is evident inFIG. 1, the first plane, the second plane, and the third plane of thedata storage layers are parallel to one another.

FIG. 2 is a top view of read elements 102 in an exemplary embodiment ofthe invention. Read elements 102 are in an array in the X-Y direction.Read elements 102 are spaced according to a desired bit density in thedata storage layers 112, 122, and 132. Read elements 102 comprise anyelements adapted to sense magnetic fields from domains that representbits stored on data storage layer 112. For example, read elements 102may comprise Hall Effect elements, spin valve elements, or tunnel valveelements.

FIG. 3 is a top view of write elements 104 in an exemplary embodiment ofthe invention. Write elements 104 are formed from a cross-point array ofcurrent loops. An individual write element 104 is indicated by thedotted circle in FIG. 3. Current loops 302 formed from conductivematerial travel in the X direction, and current loops 304 travel in theY direction. The intersection points of the current loops correspondwith the locations of the read elements 102 which are illustrated asdotted boxes. Current loops 302 and 304 each generate a magnetic fieldof magnitude X. In locations where the current loops do not intersect,the magnetic field has a magnitude of X. In locations where the currentloops intersect, the magnetic fields from both current loops areadditive to generate a magnetic field having a magnitude of 2×. The 2×magnetic field is used to write bits to data storage layer 112 of FIG.1.

According to features and aspects herein, magnetic memory 100 is adaptedto provide storage of bits in the data storage layers 112, 122, and 132(and possibly other data storage layers not shown). To store the bits inmagnetic memory 100, each of the data storage layers 112, 122, and 132are able to store bits in the X-Y direction. Magnetic memory 100 is alsoable to transfer bits in the Z direction in FIG. 1 between the datastorage layers 112, 122, and 132.

FIG. 4 is a flow chart illustrating a method 400 of writing bits tomagnetic memory 100 in an exemplary embodiment of the invention. In step402, write elements 104 apply magnetic fields to data storage layer 112to create or imprint a plurality of magnetic domains in data storagelayer 112. A magnetic domain comprises a region of magnetizationsurrounded by regions of a different magnetization (or backgroundmagnetization). The magnetic domains represent a plurality of bits ofdata that is written into data storage layer 112. Magnetic domains mayalso be referred to herein as regions of magnetization or magneticimprints. Control system 150 may heat data storage layer 112 to assistin creating the magnetic domains in data storage layer 112. Heating datastorage layer 112 to just below its Curie temperature reduces thecoercivity (Hc) and allows the magnetization of this layer to be moreeasily influenced by the magnetic fields from write elements 104.Control system 150 may apply a current directly to data storage layer112 to apply the heat, as data storage layer 112 comprises a metallicmaterial with some resistance. Control system 150 may alternativelyapply a current to a heating layer (not shown) that is included instorage stack 110 proximate to data storage layer 112.

FIG. 5 is an isometric view of a portion of data storage layer 112illustrating bits written to data storage layer 112. Data storage layer112 has a background magnetization, such as a magnetizationperpendicular to the plane pointing downward in FIG. 5. Bits are writtento data storage layer 112 in the form of magnetic domains 502. Themagnetic domains 502 are formed by changing the magnetization locally toa polarity opposite than the primary magnetization of data storage layer112. The magnetization of magnetic domains 502 are illustrated by arrowsin FIG. 5. The existence of a magnetic domain 502 magnetized opposite tothe background magnetization indicates one binary value of a bit, suchas a “1”. The absence of an oppositely-magnetized domain 502 in aparticular region in data storage layer 112 indicates another binaryvalue of a bit, such as a “0”. The absence of a magnetic domain 502 inFIG. 5 is illustrated as a dotted circle.

FIG. 6 illustrates magnetic memory 100 with bits written into datastorage layer 112 according to step 402 of FIG. 4. A magnetic domain hasbeen imprinted into data storage layer 112 by the rightmost writeelement 104 and the middle write element 104. The magnetic domains areindicated by a single arrow pointing upward in a dotted box representinga region proximate to the rightmost write element 104 and a regionproximate to the middle write element 104. The background magnetizationwith no opposite domain has been imprinted into data storage layer 112proximate to the leftmost write element 104. The absence of an oppositemagnetic domain is indicated by a dotted box representing a regionproximate to the leftmost write element 104 that does not include anarrow.

With the bits written into data storage layer 112 in FIG. 6, controlsystem 150 may transfer the bits up main column 101 as follows. Controlsystem 150 heats data storage layer 122 so that magnetic fields from themagnetic domains in data storage layer 112 imprint the magnetic domainsin data storage layer 122 in step 404 of FIG. 4. By imprinting themagnetic domains from data storage layer 112 to data storage layer 122,the bits stored in data storage layer 112 are copied to data storagelayer 122 in the Z direction (upward in FIG. 6). Control system 150 mayapply a current directly to data storage layer 122 to apply the heat, ormay apply a current to a heating layer (not shown) that is included instorage stack 120 proximate to data storage layer 122. Although heat isused in this embodiment to imprint the magnetic domains from datastorage layer 112 to data storage layer 122, other methods or means maybe used to facilitate the transfer of the magnetic domains. FIG. 7illustrates magnetic memory 100 with the bits copied from data storagelayer 112 to data storage layer 122 according to step 404 of FIG. 4. Theabsence of an isolated magnetic domain is also illustrated in FIG. 7 bya dotted box.

The magnetic domains may not be imprinted directly from data storagelayer 112 to data storage layer 122. As previously stated, there may bean intermediate layer between data storage layer 112 and data storagelayer 122 that facilitates the transfer. For instance, control system150 may first copy the magnetic domains from data storage layer 112 tothe intermediate layer, and then copy the magnetic domains from theintermediate layer to data storage layer 122. The intermediate layer(s)acts as a buffer to prevent other magnetic domains in other layers (suchas magnetic domains for other bit patterns) from interfering with thetransfer of the magnetic domain from data storage layer 112 to datastorage layer 122.

With the bits written into data storage layer 122 in FIG. 7, controlsystem 150 may transfer the bits up main column 101 as follows. Controlsystem 150 heats data storage layer 132 so that magnetic fields from themagnetic domains in data storage layer 122 imprint the magnetic domainsin data storage layer 132 in step 408 of FIG. 4. By imprinting themagnetic domains from data storage layer 122 to data storage layer 132,the bits stored in data storage layer 122 are copied to data storagelayer 132 in the Z direction. Again, control system 150 may apply acurrent directly to data storage layer 132 to apply the heat, or mayapply a current to a heating layer (not shown) that is included instorage stack 130 proximate to data storage layer 132. FIG. 8illustrates magnetic memory 100 with the bits copied from data storagelayer 122 to data storage layer 132 according to step 408 of FIG. 4.Method 400 in FIG. 4 may include further steps of heating upper layersin magnetic memory 100 to transfer the bits up main column 101.

After copying bits from one data storage layer to another, controlsystem 150 may erase the bits from the sending data storage layer. Forinstance, to erase bits from data storage layer 112, control system 150may heat data storage layer 112 to or above its Curie temperature (Tc)to erase the magnetic domains and return data storage layer 112 to itsprimary or background magnetization after it is cooled. Control system150 may heat and cool data storage layer 112 in the presence of a biasfield in order to return data storage layer 112 to its primary orbackground magnetization. The bits are thus erased from data storagelayer 112. Control system 150 may apply a current directly to datastorage layer 112 to apply the heat, or may alternatively apply acurrent to a heating layer (not shown) that is included in storage stack110 proximate to data storage layer 112.

In FIG. 8, the bits originally written to data storage layer 112 havebeen copied to data storage layer 122 and data storage layer 132. Thebits may be stored in data storage layer 132, or may be transferred upthe stack of magnetic memory 100 (although additional storage stackshave not been illustrated in FIG. 8). With the bits stored in datastorage layer 132, control system 150 may erase the bit pattern storedin data storage layer 112 and write elements 104 may write another bitpattern into data storage layer 112. Control system 150 may erase thebit pattern stored in data storage layer 122 and transfer the new bitpattern from data storage layer 112 to data storage layer 122 asdescribed in step 404 of FIG. 4. With one bit pattern stored in datastorage layer 132 and another bit pattern stored in data storage layer122, control system 150 may erase the bit pattern stored in data storagelayer 112 and write elements 104 may write yet another bit pattern intodata storage layer 112 if desired.

FIG. 9 illustrates a cross-sectional view of another embodiment ofmagnetic memory 100 where magnetic memory 100 also includes intermediatestacks. In this embodiment, magnetic memory 100 further includesintermediate stacks 140 and 150. An intermediate stack comprises anysubset of layers adapted to temporarily store bits of data. Intermediatestack 140 includes one or more layers of material. One of the layers ofintermediate stack 140 comprises an intermediate storage layer 142,which is a layer of magnetic material adapted to temporarily store bits.Intermediate storage layer 142 may be comprised of the same materialused for the data storage layers 112, 122, and 132, such as TbFeCo orCoPt multilayers. Intermediate storage layer 142 defines a planeparallel to the planes of data storage layers 112, 122, and 132.Intermediate stack 140 may also include one or more insulating layers144 adapted to insulate heating of intermediate storage layer 142 fromother data storage layers. Intermediate stack 140 may also include aheating layer (not shown) adapted to heat intermediate storage layer142. Intermediate stack 150 may have a similar configuration asintermediate stack 140 having an intermediate storage layer 152, aninsulating layer 154, and possibly a heating layer.

FIG. 10 is a flow chart illustrating a method 1000 of writing bits tomagnetic memory 100 in an exemplary embodiment of the invention. In step1002, control system 150 heats intermediate storage layer 142 to orabove its Curie temperature, and heats data storage layer 112 just belowits Curie temperature. Heating just below a Curie temperature refers toheating a layer to a temperature below its Curie temperature but highenough to allow the magnetization of the layer to be more easilyinfluenced by magnetic fields. Heating intermediate storage layer 142 toor above its Curie temperature erases any magnetic domains in this layerso they will not affect data storage layer 112. Heating data storagelayer 112 just below its Curie temperature allows write elements 104 tomore easily write to this layer.

In step 1003, write elements 104 apply magnetic fields to data storagelayer 112 to create or imprint a plurality of magnetic domains in datastorage layer 112. The magnetic domains represent the bit pattern beingwritten to data storage layer 112. In step 1004, control system 150allows data storage layer 112 to cool which stores the magnetic domainsin data storage layer 112. In step 1005, control system 150 then allowsintermediate storage layer 142 to cool. As intermediate storage layer142 cools, magnetic domains from data storage layer 112 or data storagelayer 122 may be imprinted in the layer. Any magnetic domains inintermediate storage layer 142 should not affect the magnetic domainsstored in data storage layer 112 as it has already cooled.

To copy the bits from data storage layer 112 to data storage layer 122,the following takes place. Control system 150 heats data storage layer122 to or above its Curie temperature, and heats intermediate storagelayer 142 just below its Curie temperature in step 1006. Heating datastorage layer 122 to or above its Curie temperature erases any magneticdomains in this layer so they will not affect intermediate storage layer142. Heating intermediate storage layer 142 just below its Curietemperature allows magnetic fields from the magnetic domains in datastorage layer 112 to imprint the magnetic domains in intermediatestorage layer 142. By imprinting the magnetic domains from data storagelayer 112 to intermediate storage layer 142, the bits stored in datastorage layer 112 are copied to intermediate storage layer 142 in the Zdirection (upward in FIG. 9). In step 1007, control system 150 allowsintermediate storage layer 142 to cool which stores the magnetic domainsin intermediate storage layer 142. In step 1008, control system 150 thenallows data storage layer 122 to cool.

Control system 150 then heats intermediate storage layer 152 to or aboveits Curie temperature, and heats data storage layer 122 just below itsCurie temperature in step 1009. Heating intermediate storage layer 152to or above its Curie temperature erases any magnetic domains in thislayer so they will not affect data storage layer 122. Heating datastorage layer 122 just below its Curie temperature allows magneticfields from the magnetic domains in intermediate storage layer 142 toimprint the magnetic domains in data storage layer 122. By imprintingthe magnetic domains from intermediate storage layer 142 to data storagelayer 122, the bits stored in intermediate storage layer 142 are copiedto data storage layer 122 in the Z direction (upward in FIG. 9). In step1010, control system 150 allows data storage layer 122 to cool whichstores the magnetic domains in data storage layer 122. In step 1011,control system 150 then allows intermediate storage layer 142 to cool.The bits have thus been successfully copied from data storage layer 112to data storage layer 122 through intermediate storage layer 142. Asimilar method is used to copy the bits further up main column 101.

Control system 150 may erase the bits from data storage layer 112 ifdesired. To erase the bits, control system 150 heats intermediatestorage layer 142 to or above its Curie temperature, and heats datastorage layer 112 to or above its Curie temperature. Control system 150allows data storage layer 112 to cool which returns data storage layer112 to its primary or background magnetization. Control system 150 mayheat and cool data storage layer 112 in the presence of a bias field inorder to return data storage layer 112 to its primary or backgroundmagnetization. Control system 150 then allows intermediate storage layer142 to cool. Again, as intermediate storage layer 142 cools, magneticdomains from data storage layer 122 may be imprinted in this layer. Anymagnetic domains in intermediate storage layer 142 should not affect themagnetic domains stored in data storage layer 112 as it has alreadycooled.

At some point, the bits stored in data storage layers 112, 122, or 132are read from magnetic memory 100. FIG. 11 is a flow chart illustratinga method 1100 of reading bits from magnetic memory 100 in an exemplaryembodiment of the invention. This embodiment illustrates reading bitsstored in data storage layer 132, but a similar process may be used toread bits stored in other data storage layers. FIG. 12 illustratesmagnetic memory 100 with the bits stored in data storage layer 132 in anexemplary embodiment. To read the bits in data storage layer 132, thebits need to be transferred down main column 101 to data storage layer112 because data storage layer 112 is proximate to read elements 102. Ifother bit patterns are stored in data storage layer 112 or data storagelayer 122, these bits patterns are read and temporarily offloaded to anoverflow storage system, which is described in FIG. 16.

In step 1102 of FIG. 11, control system 150 heats data storage layer 122so that magnetic fields from the magnetic domains in data storage layer132 imprint the magnetic domains in data storage layer 122. Byimprinting the magnetic domains from data storage layer 132 to datastorage layer 122, the bits stored in data storage layer 132 are copiedto data storage layer 122 in the Z direction (downward in FIG. 12).

In step 1106, control system 150 heats data storage layer 112 so thatmagnetic fields from the magnetic domains in data storage layer 122imprint the magnetic domains in data storage layer 112. By imprintingthe magnetic domains from data storage layer 122 to data storage layer112, the bits stored in data storage layer 122 are copied to datastorage layer 112 in the Z direction. FIG. 13 illustrates magneticmemory 100 with the bits copied from data storage layer 132 to datastorage layer 122 and from data storage layer 122 to data storage layer112.

After copying bits from one data storage layer to another, controlsystem 150 may erase the bits from the sending data storage layer. Forinstance, to erase bits from data storage layer 132, control system 150may heat data storage layer 132 to or above its Curie temperature (Tc)to erase the magnetic domains and returns data storage layer 132 to itsprimary or background magnetization after it is cooled. Control system150 may heat and cool data storage layer 132 in the presence of a biasfield in order to return data storage layer 132 to its primary orbackground magnetization. The bits are thus erased from data storagelayer 132.

With the bits transferred to data storage layer 112 that is proximate toread elements 102, the bits are in a position to be read by readelements 102. Read elements 102 sense magnetic fields from the magneticdomains in data storage layer 112 to read the bits from data storagelayer 112 in step 1110. If read elements 102 are spin valves, forinstance, the resistance of the spin valve will depend on the directionand magnitude of the field emanating from data storage layer 112. Forexample, upwardly-pointing magnetic fields from a magnetic domain willresult in one value of resistance, while a downwardly-pointing magneticfield will result in a second resistance. An isolated magnetic domainthus results in one resistance, while the background magnetization, orno isolated domain, results in a second resistance.

FIG. 14 illustrates a cross-sectional view of another embodiment ofmagnetic memory 100 where magnetic memory 100 also includes intermediatestacks. This embodiment of magnetic memory 100 is also illustrated inFIG. 9. However, FIG. 14 shows a bit pattern stored in data storagelayer 132 that needs to be copied down to data storage layer 112 to beread.

FIG. 15 is a flow chart illustrating a method 1500 of reading bits frommagnetic memory 100 in an exemplary embodiment of the invention. In step1502, control system 150 heats data storage layer 122 to or above itsCurie temperature, and heats intermediate storage layer 152 just belowits Curie temperature. Heating data storage layer 122 to or above itsCurie temperature erases any magnetic domains in this layer so they willnot affect intermediate storage layer 152. Heating intermediate storagelayer 152 just below its Curie temperature allows magnetic fields fromthe magnetic domains in data storage layer 132 to imprint the magneticdomains in intermediate storage layer 152. By imprinting the magneticdomains from data storage layer 132 to intermediate storage layer 152,the bits stored in data storage layer 132 are copied to intermediatestorage layer 152 in the Z direction (downward in FIG. 14). In step1503, control system 150 allows intermediate storage layer 152 to coolwhich stores the magnetic domains in intermediate storage layer 152. Instep 1504, control system 150 then allows data storage layer 122 tocool.

In step 1505, control system 150 heats intermediate storage layer 142 toor above its Curie temperature, and heats data storage layer 122 justbelow its Curie temperature in step 1505. Heating intermediate storagelayer 142 to or above its Curie temperature erases any magnetic domainsin this layer so they will not affect data storage layer 122. Heatingdata storage layer 122 just below its Curie temperature allows magneticfields from the magnetic domains in intermediate storage layer 152 toimprint the magnetic domains in data storage layer 122. By imprintingthe magnetic domains from intermediate storage layer 152 to data storagelayer 122, the bits stored in intermediate storage layer 152 are copiedto data storage layer 122 in the Z direction (downward in FIG. 14). Instep 1506, control system 150 allows data storage layer 122 to coolwhich stores the magnetic domains in data storage layer 122. In step1507, control system 150 then allows intermediate storage layer 142 tocool. The bits have thus been successfully copied from data storagelayer 132 to data storage layer 122 through intermediate storage layer152.

In step 1508, control system 150 heats data storage layer 112 to orabove its Curie temperature, and heats intermediate storage layer 142just below its Curie temperature. Heating data storage layer 112 to orabove its Curie temperature erases any magnetic domains in this layer sothey will not affect intermediate storage layer 142. Heatingintermediate storage layer 142 just below its Curie temperature allowsmagnetic fields from the magnetic domains in data storage layer 122 toimprint the magnetic domains in intermediate storage layer 142. Byimprinting the magnetic domains from data storage layer 122 tointermediate storage layer 142, the bits stored in data storage layer122 are copied to intermediate storage layer 142 in the Z direction(downward in FIG. 14). In step 1509, control system 150 allowsintermediate storage layer 142 to cool which stores the magnetic domainsin intermediate storage layer 142. In step 1510, control system 150 thenallows data storage layer 112 to cool. As data storage layer 112 cools,magnetic fields from the magnetic domains in intermediate storage layer142 to imprint the magnetic domains in data storage layer 112. Byimprinting the magnetic domains from intermediate storage layer 142 todata storage layer 112, the bits stored in intermediate storage layer142 are copied to data storage layer 112 in the Z direction (downward inFIG. 14).

With the bits transferred to data storage layer 112 that is proximate toread elements 102, the bits are in a position to be read by readelements 102. Read elements 102 sense magnetic fields from the magneticdomains in data storage layer 112 to read the bits from data storagelayer 112 in step 1511.

As previously stated, if a bit pattern in data storage layer 132 is tobe read and another bit pattern is being simultaneously stored in datastorage layer 122, then control system 150 needs to move the bit patternstored in the data storage layers below data storage layer 132 so thatthe bits stored in data storage layer 132 can be transferred to datastorage layer 112. To provide a location to temporarily store the bitpattern from data storage layer 122 and other data storage layers,magnetic memory 100 may further include an overflow storage systemaccording to features and aspects herein.

FIG. 16 illustrates magnetic memory 100 that includes an overflowstorage system 1602. Overflow storage system 1602 may comprise anydesired memory adapted to store the bits read from data storage layer112. Overflow storage system 1602 may include one or more storage stacksmuch like storage stacks 110, 120, and 130. Overflow storage system 1602may serve a single column of magnetic memory 100 shown in FIG. 16, ormay serve multiple columns of magnetic memory 100 which are not shown.As illustrated in FIG. 16, both data storage layer 122 and data storagelayer 132 are storing bits. Data storage layer 122 stores a first bitpattern and data storage layer 132 stores a second bit pattern. If arequest is received in magnetic memory 100 for the bits stored in datastorage layer 132, then control system 150 operates as described in FIG.11 to move the first bit pattern in data storage layer 122 to overflowstorage system 1602. Control system 150 also operates as described inFIG. 11 to move the second bit pattern in data storage layer 132 to datastorage layer 112 and to read the bits from data storage layer 112.After the second bit pattern previously stored in data storage layer 132has been read, control system 150 may write the first bit pattern beingstored in overflow storage system 1602 back onto data storage layer 122or another data storage layer in magnetic memory 100.

As previously stated, storage stacks 110, 120, and 130 may each includea heating layer adapted to heat the corresponding data storage layer inthe storage stack. FIG. 17 illustrates storage stack 110 that includes aheating layer. In this embodiment, storage stack 110 includes heatinglayer 1702, data storage layer 112, and insulating layer 114. Heatinglayer 1702 is adapted to heat data storage layer 112 responsive to acurrent provided by control system 150 (see FIG. 1). Heating layer 1702may comprise a semiconductor or metallic layer having a resistancesufficient to heat data storage layer 112 responsive to an electricalcurrent. When heating layer 1702 heats data storage layer 112,insulating layer 114 is adapted to insulate the heat from other datastorage layers.

Heating layer 1702 may comprise cross-hatched conductors. FIG. 18 is atop view of a heating layer 1702 comprising cross-hatched conductors.The horizontal conductors 1802 and the vertical conductors 1804 in FIG.18 intersect at a plurality of points. The intersection points of theconductors 1802, 1804 correspond with the locations of the magneticdomains in data storage layer 112 (i.e., the locations where bits arestored). In this embodiment, conductors 1802, 1804 are not uniform inwidth. The widths of conductors 1802, 1804 are narrower at theintersection points (i.e., the bit locations) as compared to the widthsof conductors 1802, 1804 between the intersection points. Withconductors 1802, 1804 narrower at the intersections points, the powerdissipation is higher which results in higher temperatures at theintersections points. With conductors 1802, 1804 wider between theintersections points, the power dissipation is lower which results inlower temperatures between the intersections points. One advantage ofthis configuration is that less power is consumed as higher temperaturesare only provided at the intersections points. Another advantage is thathigher thermal gradients can be acquired in data storage layer 112 alongthe lengths on the conductors 1802, 1804 because the regions in datastorage layer 112 between the bit locations remain cooler. Anotheradvantage is faster cooling time as a smaller volume of data storagelayer 112 is heated and thus cooled. Another advantage is that theresistance of the wires can be lower as the average width of theconductors 1802, 1804 is larger.

In other embodiments, heating layer 1702 does not comprise cross-hatchedconductors, but comprises either horizontal conductors 1802 or verticalconductors 1804. The horizontal conductors 1802 or the verticalconductors 1804 may be narrower at locations that correspond with thelocations of the magnetic domains in data storage layer 112 (i.e., thelocations where bits are stored).

Referring back to FIG. 5, magnetic domains 502 may grow larger whenbeing transferred from one data storage layer to another. The magneticfields from the magnetic domains 502 are not perfectly perpendicular andtend to diverge at the domain walls. Due to this occurrence, themagnetic domains can grow in size when being transferred to successivedata storage layers which can affect the overall density of the magneticmemory 100 (see FIG. 1). According to features and aspects herein, thedata storage layers in magnetic memory 100 can be patterned in oneembodiment to control the size of the magnetic domains.

FIG. 19 illustrates data storage layer 112 as patterned in an exemplaryembodiment of the invention. Data storage layer 112 is patterned intostrips in this embodiment. The locations of the strips correspond withthe magnetic domains in data storage layer 112. The width of the stripscorresponds with a desired size of the magnetic domains. For instance,if the desired width of the magnetic domains is 1 micron, then the widthof the strips may be 1.2 microns. Because the magnetic domains are ableto spread along the length of the strips in data storage layer 112(which is up and down in FIG. 19), the next data storage layer in thestack of magnetic memory 100, which is data storage layer 122, may alsobe patterned into strips that are orthogonal to the strips of datastorage layer 112.

FIG. 20 illustrates data storage layer 122 as patterned in an exemplaryembodiment of the invention. Data storage layer 122 is also patternedinto strips similar to data storage layer 112. However, the strips ofdata storage layer 122 are orthogonal to the strips in data storagelayer 112. The magnetic domains are able to spread along the length ofthe strip (which is left to right in FIG. 20), but the magnetic domainsare controlled in those directions by the previous orthogonal strips. Bymaking the strips of the subsequent data storage layer orthogonal to theprevious data storage layer, the spread of the magnetic domains can becontrolled in all directions. If data storage layer 132 in FIG. 1 ispatterned into strips, then the strips would again be orthogonal to thestrips in data storage layer 122.

Data storage layers may be patterned into different shapes other thanstrips. For instance, a data storage layer may be patterned into domain“islands”, which is a section of material having a size of a desiredmagnetic domain. FIG. 32 illustrates data storage layer 112 as patternedin another exemplary embodiment of the invention. Data storage layer 112is patterned into domain-sized islands in this embodiment. The locationsof the islands correspond with the magnetic domains in data storagelayer 112. The area of the islands corresponds with a desired size ofthe magnetic domains. The next data storage layer in the stack ofmagnetic memory 100, which is data storage layer 122, may also bepatterned into similar islands.

FIG. 21 is a flow chart illustrating a method 2100 of fabricating amagnetic memory in an exemplary embodiment of the invention. Method 2100may be used to fabricate magnetic memory 100 illustrated in the previousfigures. Step 2102 comprises forming a plurality of read elements and aplurality of write elements. The read element may be formed in a firstlayer and the write elements may be formed in one or more other layers.For instance, the read elements may comprise an array of Hall Effectelements, spin valve elements, or tunnel valve elements. The writeelements may comprise a plurality of current loops that correspond withthe read elements. Step 2104 comprises forming a first storage stackproximate to the plurality of read elements and the plurality of writeelements. The first storage stack includes a first data storage layerdefining a first plane. The first data storage layer may be comprised ofmagnetic material, such as TbFeCo or CoPt multilayers. Step 2106comprises forming a second storage stack proximate to the first storagestack. The second storage stack includes a second data storage layerdefining a second plane that is parallel to the first plane.

The write elements as formed in step 2102 are adapted to apply magneticfields to the first data storage layer to create a plurality of magneticdomains in the first data storage layer representing a plurality of bitsin the first data storage layer. The second data storage layer as formedin step 2106 is responsive to heat and magnetic fields from the magneticdomains in the first data storage layer to replicate the magneticdomains from the first data storage layer. The first data storage layeras formed in step 2104 is responsive to heat to erase the magneticdomains.

Method 2100 in FIG. 21 may further comprise step 2108 that comprisesforming a third storage stack proximate to the second storage stack. Thethird storage stack includes a third data storage layer defining a thirdplane that is parallel to the first plane and the second plane. Thethird data storage layer as formed in step 2108 is responsive to heatand magnetic fields from the magnetic domains in the second data storagelayer to replicate the magnetic domains from the second data storagelayer. The second data storage layer as formed in step 2106 is furtherresponsive to heat to erase the magnetic domains. Method 2100 mayinclude other steps to form a fourth storage stack, a fifth storagestack, etc. The data storage layers are further responsive to heat toallow magnetic domains to transfer bits the other direction between thedata storage layers. Method 2100 may also include the further steps offorming intermediate stacks as shown in FIG. 9 between the storagestacks.

FIG. 22 is a flow chart illustrating a method 2200 of fabricating astorage stack, such as storage stack 120 in FIG. 1, in an exemplaryembodiment of the invention. Step 2202 comprises forming a data storagelayer. Step 2204 comprises forming a heating layer proximate to the datastorage layer. Step 2206 comprises forming an insulating layer proximateto the heating layer. Method 2200 may also be used to form intermediatestacks as described herein.

FIG. 23 is a flow chart illustrating a method 2300 of patterning a datastorage layer in an exemplary embodiment of the invention. Step 2302comprises patterning a first data storage layer into strips. Thepatterning step may comprise forming photo-resist on a full film of thefirst data storage layer, and performing lift-off to form the strips.Alternatively, the magnetic film can be etched or milled to form thestrips. As previously discussed, the first data storage layer is adaptedto store bits in the form of magnetic domains. The locations of thestrips correspond with the magnetic domains in the first data storagelayer. The width of the strips corresponds with a desired size of themagnetic domains. For instance, if the desired width of the magneticdomains is 1 micron, then the width of the strips may be 1.2 microns.

Step 2304 comprises patterning the second data storage layer intostrips. Once again, the patterning step may comprise formingphoto-resist on a full film of the second data storage layer, andperforming lift-off, milling, or etching to form the strips. The stripsof the second data storage layer are orthogonal to the strips of thefirst data storage layer. By having the strips in orthogonal insuccessive strips of data storage layers, the size of a magnetic domaincan advantageously be controlled. Method 2300 may include other steps ofpatterning successive data storage layers into strips that areorthogonal to the strips of the previous data storage layer.

EXAMPLE

FIG. 24 is a cross-sectional view of a more detailed embodiment of amagnetic memory 2400 in an exemplary embodiment of the invention.Magnetic memory 2400 comprises a three-dimensional solid state memory.The cross-sectional view in FIG. 24 only shows a portion of magneticmemory 2400, as an actual magnetic memory may extend further in the X-Ydirection. Magnetic memory 2400 includes a main column 2401 of layerscomprising an array of read elements 2402, a cross-point array ofcurrent loops 2404, a plurality of storage stacks 2410, 2430, 2450, and2470, a plurality of intermediate stacks 2420, 2440, and 2460, and acontrol system 2480. Storage stacks 2410, 2430, 2450, and 2470 are usedfor actual storage of bits, while intermediate stacks 2420, 2440, and2460 are used as a buffer between storage stacks 2410, 2430, 2450, and2470. Storage stack 2410 is formed proximate to the array of readelements 2402 and the cross-point array of current loops 2404.Intermediate stack 2420 is formed proximate to storage stack 2410.Storage stack 2430 is formed proximate to intermediate stack 2420.Intermediate stack 2440 is formed proximate to storage stack 2430.Storage stack 2450 is formed proximate to intermediate stack 2440.Intermediate stack 2460 is formed proximate to storage stack 2450.Storage stack 2470 is formed proximate to intermediate stack 2460.Magnetic memory 2400 may include n storage stacks and n intermediatestacks as desired.

Each storage stack 2410, 2430, 2450, and 2470 includes a data storagelayer, a heating layer, and an insulating later. The data storage layerscomprise perpendicular media type layers, such as TbFeCo or CoPtmulti-layers with a typical Mr in the 300-500 emu/cc range. The datastorage layers also have a Curie temperature designed to be around 200°C. The heating layers comprise any resistive material adapted toincrease in temperature responsive to the application of an electricalcurrent. The insulating layers comprise any thermally insulatingmaterial that confines heat to the data storage layer in itscorresponding storage stack.

Each intermediate stack 2420, 2440, and 2460 includes similar layers toa storage stack, that being a data storage layer, a heating layer, andan insulating later.

The following describes a write operation in magnetic memory 2400. Tostart, the magnetization direction of data storage layer 2412 is set ina uniform direction, which is the background direction. This can beachieved by applying a current to all of the write loops 2404 andheating data storage layer 2412 to close to or above its Curietemperature (Tc). Alternatively, a large current loop could be formedbelow storage stack 2410 to provide a bias field to data storage layer2412, which will magnetize data storage layer 2412 when heated.

To start writing data, a page of bits is written into storage stack2410. A page of bits comprises any number of bits, such as 4 kbits, 8kbits, etc. To write the page of bits into storage stack 2410, controlsystem 2480 applies an electrical current to heating layer 2413, whichcauses heating layer 2413 to rise in temperature. The heat from heatinglayer 2413 in turn raises the temperature of data storage layer 2412 sothat the magnetization of data storage layer 2412 is more easily changedresponsive to an external magnetic field. In other words, the heatinglowers the coercive field and/or Hk of data storage layer 2412 makingimprinting of a magnetic domain energetically favorable. Insulatinglayer 2414 insulates heat from heating layer 2413 from affecting theother data storage layers formed above in the column 2401.

To ensure that any domains present in the data storage layer 2422 ofintermediate stack 2420 do not influence the writing of the data storagelayer 2412 of storage stack 2410, control system 2480 applies anelectrical current to heating layer 2423 which causes heating layer 2423to rise in temperature above its Curie temperature (Tc) to erase anymagnetic domains in this layer. Control system 2480 then energizes thecross-point array of current loops 2404 to write the bits to specificlocations in data storage layer 2412. The current loops 2404 generatemagnetic fields that are opposite to the normal magnetization of datastorage layer 2412. The magnetic fields from the current loops 2404,such as magnetic fields of about 500 Oe, change the magnetization inspecific locations in data storage layer 2412 to create magneticdomains. The magnetic domains represent the bits in data storage layer2412. The heating of data storage layer 2412 allows for the magneticfields to more easily change the magnetization of data storage layer2412 and create the magnetic domains.

When the magnetic domains are written into data storage layer 2412,control system 2480 stops applying the electrical current to heatinglayer 2413 to allow data storage layer 2412 to cool with the magneticdomains imprinted and stops applying current to the array of currentloops 2404. After data storage layer 2412 has cooled sufficiently,control system 2480 stops applying current to heating layer 2423 toallow data storage layer 2422 to cool. FIG. 25 illustrates magneticmemory 2400 with bits written into data storage layer 2412 in anexemplary embodiment. The magnetic domains representing the bits areindicated by a single arrow pointing upward in a dotted box. The absenceof a magnetic domain is illustrated by an empty dotted box. When datastorage layer 2422 is cooled, it may be imprinted with magnetic domainsfrom either data storage layer 2412 or data storage layer 2432, which isnot shown in FIG. 25.

Bits may be written to data storage layer 2412 in an alternative manner.First, control system 2480 may apply an electrical current to heatinglayer 2413 and heating layer 2423. Control system 2480 may then energizethe cross-point array of current loops 2404 to write theupwardly-pointing bits. Control system 2480 may then energize thecross-point array of current loops 2404 through a reverse current towrite the downwardly-pointing bits. When the magnetic domains arewritten into data storage layer 2412, control system 2480 stops applyingthe electrical current to heating layer 2413 to allow data storage layer2412 to cool with the magnetic domains imprinted. After data storagelayer 2412 has cooled sufficiently, control system 2480 stops applyingcurrent to heating layer 2423 to allow data storage layer 2422 to cool.

Control system 2480 may transfer the page of bits stored in data storagelayer 2412 upwardly in main column 2401 to other storage stacks ifdesired. To transfer the page of bits up main column 2401, controlsystem 2480 applies an electrical current to heating layer 2433 to heatdata storage layer 2432 above its Curie temperature to erase anymagnetic domains in this layer. Control system 2480 also applies anelectrical current to heating layer 2423 to heat data storage layer 2422just below its Curie temperature. When heating data storage layer 2422,magnetic fields from the magnetic domains in data storage layer 2412imprint or replicate the magnetic domains in data storage layer 2422.

When the magnetic domains are imprinted in data storage layer 2422,control system 2480 stops applying the electrical current to heatinglayer 2423 to allow data storage layer 2422 to cool. Control system 2480then stops applying the electrical current to heating layer 2433 toallow data storage layer 2432 to cool. FIG. 26 illustrates magneticmemory 2400 with bits imprinted into data storage layer 2422 in anexemplary embodiment. When data storage layer 2432 is cooled, it may beimprinted with magnetic domains from either data storage layer 2422 ordata storage layer 2442, which is not shown in FIG. 26.

Data storage layer 2422 is an intermediate layer in this embodiment, socontrol system 2480 transfers the page of bits stored in data storagelayer 2422 further upward in main column 2401 to the next storage stack.Control system 2480 applies an electrical current to heating layer 2443to heat data storage layer 2442 above its Curie temperature to erase anymagnetic domains in this layer. Control system 2480 also applies anelectrical current to heating layer 2433 to heat data storage layer 2432just below its Curie temperature. When heating data storage layer 2432,magnetic fields from the magnetic domains in data storage layer 2422imprint or replicate the magnetic domains in data storage layer 2432.

When the magnetic domains are written into data storage layer 2432,control system 2480 stops applying the electrical current to heatinglayer 2433 first to allow data storage layer 2432 to cool. Controlsystem 2480 then stops applying the electrical current to heating layer2443 to allow data storage layer 2442 to cool. FIG. 27 illustratesmagnetic memory 2400 with bits written into data storage layer 2432 inan exemplary embodiment. When data storage layer 2442 is cooled, it maybe imprinted with magnetic domains from either data storage layer 2432or data storage layer 2452, which is not shown in FIG. 27.

Data storage layer 2432 is an actual storage layer where the page ofbits may be stored. With the page of bits transferred to data storagelayer 2432, control system 2480 may erase the page of bits from datastorage layer 2412, although it is not necessary. To erase the bits,control system 2480 applies current to heating layer 2413 and heatinglayer 2423 to heat data storage layer 2412 and data storage layer 2422,respectively, above their Curie temperature. Heating these data storagelayers 2412 and 2422 above their Curie temperatures in effect erases themagnetic domains and consequently the bits from these layers. Controlsystem 2480 stops applying the electrical current to heating layer 2413first to allow data storage layer 2412 to cool. Data storage layer 2412cools in the absence of magnetic fields, and thus the bits are erasedfrom this layer. Control system 2480 then stops applying the electricalcurrent to heating layer 2423 to allow data storage layer 2422 to cool.The magnetic domains in data storage layer 2432 will imprint back intodata storage layer 2422 while data storage layer 2422 is cooled.However, the magnetic domains will not again imprint in data storagelayer 2412 because this layer has already cooled. FIG. 28 illustratesmagnetic memory 2400 with bits erased from data storage layer 2412 in anexemplary embodiment.

Control system 2480 may transfer the page of bits stored in data storagelayer 2432 further upward in the stack to other storage stacks ifdesired. To transfer the page of bits up the stack, control system 2480applies an electrical current to heating layer 2453 to heat data storagelayer 2452 above its Curie temperature to erase any magnetic domains inthis layer. Control system 2480 also applies an electrical current toheating layer 2443 to heat data storage layer 2442 just below its Curietemperature. When heating data storage layer 2442, magnetic fields fromthe magnetic domains in data storage layer 2432 imprint or replicate themagnetic domains in data storage layer 2442.

When the magnetic domains are written into data storage layer 2442,control system 2480 stops applying the electrical current to heatinglayer 2443 first to allow data storage layer 2442 to cool. Controlsystem 2480 then stops applying the electrical current to heating layer2453 to allow data storage layer 2452 to cool. FIG. 29 illustratesmagnetic memory 2400 with bits written into data storage layer 2442 inan exemplary embodiment. When data storage layer 2452 is cooled, it maybe imprinted with magnetic domains from either data storage layer 2442or data storage layer 2462, which is not shown in FIG. 29.

Data storage layer 2442 is an intermediate layer in this embodiment, socontrol system 2480 transfers the page of bits stored in data storagelayer 2442 further upward in main column 2401 to the next storage stack.Control system 2480 applies an electrical current to heating layer 2463to heat data storage layer 2462 above its Curie temperature to erase anymagnetic domains in this layer. Control system 2480 also applies anelectrical current to heating layer 2453 to heat data storage layer 2452just below its Curie temperature. When heating data storage layer 2452,magnetic fields from the magnetic domains in data storage layer 2442imprint or replicate the magnetic domains in data storage layer 2452.

When the magnetic domains are written into data storage layer 2452,control system 2480 stops applying the electrical current to heatinglayer 2453 first to allow data storage layer 2452 to cool. Controlsystem 2480 then stops applying the electrical current to heating layer2463 to allow data storage layer 2462 to cool. FIG. 30 illustratesmagnetic memory 2400 with bits written into data storage layer 2452 inan exemplary embodiment. When data storage layer 2462 is cooled, it maybe imprinted with magnetic domains from either data storage layer 2452or data storage layer 2472, which is not shown in FIG. 30.

Data storage layer 2432 is an actual storage layer where the page ofbits may be stored. With the page of bits transferred to data storagelayer 2452, control system 2480 may erase the page of bits from datastorage layer 2422, although it is not necessary.

With the page of bits transferred to storage stack 2430 and/or storagestack 2450, control system 2480 may store another page of bits instorage stack 2410. To write another page of bits into storage stack2410, control system 2480 applies an electrical current to heating layer2413, which causes heating layer 2413 to rise in temperature. The heatfrom heating layer 2413 in turn raises the temperature of data storagelayer 2412 so that the magnetization of data storage layer 2412 is moreeasily changed responsive to an external magnetic field. To ensure thatany domains present in the data storage layer 2422 of intermediate stack2420 do not influence the writing of the data storage layer 2412 ofstorage stack 2410, control system 2480 applies an electrical current toheating layer 2423 which causes heating layer 2423 to rise intemperature above its Curie temperature to erase any magnetic domains inthis layer. Control system 2480 then energizes the cross-point array ofcurrent loops 2404 to write the new page of bits in data storage layer2412. The heating of data storage layer 2412 allows for the magneticfields to more easily change the magnetization of data storage layer2412 and create the magnetic domains.

When the magnetic domains are written into data storage layer 2412,control system 2480 stops applying the electrical current to heatinglayer 2413 to allow data storage layer 2412 to cool with the magneticdomains imprinted. After data storage layer 2412 has cooledsufficiently, control system 2480 stops applying current to heatinglayer 2423 to allow data storage layer 2422 to cool. FIG. 31 illustratesmagnetic memory 2400 with another page of bits written into data storagelayer 2412 in an exemplary embodiment. When data storage layer 2422 iscooled, it may be imprinted with magnetic domains from either datastorage layer 2412 or data storage layer 2432, which is not shown inFIG. 31.

Although specific embodiments were described herein, the scope of theinvention is not limited to those specific embodiments. The scope of theinvention is defined by the following claims and any equivalentsthereof.

1. A magnetic memory, comprising: a first storage stack defining a first X-Y plane; and a second storage stack proximate to the first storage stack, wherein the second storage stack defines a second X-Y plane that is parallel to the first X-Y plane; wherein the first and second storage stacks are operable to transfer magnetic domains representing a plurality of bits between each other in the Z direction.
 2. The magnetic memory of claim 1 further comprising: a first intermediate stack between the first storage stack and the second storage stack; wherein the first storage stack, the first intermediate stack, and the second storage stack are operable to transfer the magnetic domains representing the bits between each other in the Z direction.
 3. The magnetic memory of claim 1 further comprising: a third storage stack proximate to the second storage stack, wherein the third storage stack defines a third X-Y plane that is parallel to the second X-Y plane; wherein the first, second, and third storage stacks are operable to transfer the magnetic domains representing the bits between each other in the Z direction.
 4. The magnetic memory of claim 3 further comprising: a second intermediate stack between the second storage stack and the third storage stack; wherein the second storage stack, the second intermediate stack, and the third storage stack are operable to transfer the magnetic domains representing the bits between each other in the Z direction.
 5. The magnetic memory of claim 1 further comprising: write elements proximate to the first storage stack, wherein the write elements are operable to apply magnetic fields to the first storage stack to write the magnetic domains representing the bits in the first storage stack.
 6. The magnetic memory of claim 1 further comprising: read elements proximate to the first storage stack, wherein the read elements are operable to sense magnetic fields from the magnetic domains in the first storage stack to read the bits from the first storage stack.
 7. The magnetic memory of claim 1 further comprising: a control system operable to control the transfer of the magnetic domains between the first and second storage stacks in the Z direction.
 8. The magnetic memory of claim 1 further comprising: an overflow storage system operable to temporarily store the bits read from the first storage stack.
 9. The magnetic memory of claim 1 wherein: the first storage stack is patterned into strips, wherein the locations of the strips correspond with the magnetic domains in the first storage stack; and the second storage stack is patterned into strips, wherein the locations of the strips correspond with the magnetic domains in the second storage stack, and wherein the strips of the second storage stack are substantially orthogonal to the strips of the first storage stack.
 10. The magnetic memory of claim 9 wherein the widths of the strips of the first storage stack and the second storage stack correspond with a desired size of the magnetic domains.
 11. A magnetic memory, comprising: a first data storage layer defining a first plane, wherein magnetic domains in the first data storage layer represent a page of bits; a second data storage layer proximate to the first data storage layer that defines a second plane that is parallel to the first plane; and a means for transferring the magnetic domains from the first data storage layer to the second data storage layer by allowing magnetic fields from the magnetic domains representing the page of bits in the first data storage layer to create corresponding magnetic domains in the second data storage layer; wherein the magnetic domains in the second data storage layer represent the page of bits copied from the first data storage layer to the second data storage layer.
 12. The magnetic memory of claim 11 wherein the means for transferring includes a means for heating the second data storage layer to reduce the coercivity of the second data storage layer.
 13. The magnetic memory of claim 11 further comprising: a means for sensing magnetic fields from the magnetic domains in the first data storage layer to read the page of bits from the first data storage layer.
 14. The magnetic memory of claim 11 further comprising: a means for writing the magnetic domains in the first data storage layer.
 15. A three-dimensional solid state magnetic memory, comprising: a first storage stack defining a first X-Y plane, wherein the first data storage layer stores an X-Y bit pattern comprising bits having a distinguishable magnetization; a first intermediate stack proximate to the first storage stack, wherein the first intermediate stack defines a second X-Y plane that is parallel to the first X-Y plane; a second storage stack proximate to the first intermediate stack, wherein the second storage stack defines a third X-Y plane that is parallel to the second X-Y plane; and a control system operable to control a transfer of the X-Y bit pattern from the first storage stack to the first intermediate stack in the Z direction by having the magnetization of the bits in the X-Y bit pattern in the first storage stack replicate the X-Y bit pattern in the first intermediate stack; the control system further operable to control a transfer of the X-Y bit pattern from the first intermediate stack to the second storage stack in the Z direction by having the magnetization of the bits in the X-Y bit pattern in the first intermediate stack replicate the X-Y bit pattern in the second storage stack.
 16. The three-dimensional solid state magnetic memory of claim 15 further comprising: a second intermediate stack proximate to the second storage stack, wherein the second intermediate stack defines a fourth X-Y plane that is parallel to the third X-Y plane; and a third storage stack proximate to the second intermediate stack, wherein the third storage stack defines a fifth X-Y plane that is parallel to the fourth X-Y plane; wherein the control system is further operable to control a transfer of the X-Y bit pattern from the second storage stack to the second intermediate stack in the Z direction by having the magnetization of the bits in the X-Y bit pattern in the second storage stack replicate the X-Y bit pattern in the second intermediate stack; wherein the control system is further operable to control a transfer of the X-Y bit pattern from the second intermediate stack to the third storage stack in the Z direction by having the magnetization of the bits in the X-Y bit pattern in the second intermediate stack replicate the X-Y bit pattern in the third storage stack.
 17. The three-dimensional solid state magnetic memory of claim 15 further comprising: an array of read elements proximate to the first storage stack, wherein the read elements are operable to sense the magnetization of the bits in the X-Y bit pattern in the first storage stack to read the X-Y bit pattern from the first storage stack.
 18. The three-dimensional solid state magnetic memory of claim 15 further comprising: a cross-point array of write elements proximate to the first storage stack, wherein the write elements are operable to apply magnetic fields to the first storage stack to write the X-Y bit pattern to the first storage stack.
 19. A method of operating a three-dimensional solid state magnetic memory comprising a first storage stack defining a first X-Y plane, a first intermediate stack proximate to the first storage stack defining a second X-Y plane that is parallel to the first X-Y plane, and a second storage stack proximate to the first intermediate stack defining a third X-Y plane that is parallel to the second X-Y plane, the method comprising: transferring an X-Y bit pattern stored in the first storage stack to the first intermediate stack in the Z direction by having the magnetization of the bits in the X-Y bit pattern in the first storage stack replicate the X-Y bit pattern in the first intermediate stack; and transferring of the X-Y bit pattern from the first intermediate stack to the second storage stack in the Z direction by having the magnetization of the bits in the X-Y bit pattern in the first intermediate stack replicate the X-Y bit pattern in the second storage stack.
 20. The method of claim 19 wherein the three-dimensional solid state magnetic memory further comprises a second intermediate stack proximate to the second storage stack defining a fourth X-Y plane that is parallel to the third X-Y plane, and a third storage stack proximate to the second intermediate stack defining a fifth X-Y plane that is parallel to the fourth X-Y plane, the method comprising: transferring the X-Y bit pattern from the second storage stack to the second intermediate stack in the Z direction by having the magnetization of the bits in the X-Y bit pattern in the second storage stack replicate the X-Y bit pattern in the second intermediate stack; and transferring the X-Y bit pattern from the second intermediate stack to the third storage stack in the Z direction by having the magnetization of the bits in the X-Y bit pattern in the second intermediate stack replicate the X-Y bit pattern in the third storage stack.
 21. The method of claim 19 further comprising: applying magnetic fields to the first storage stack to write the X-Y bit pattern to the first storage stack.
 22. The method of claim 19 further comprising: sensing magnetic fields from the magnetic domains in the first storage stack to read the X-Y bit pattern from the first storage stack.
 23. A method of fabricating a magnetic memory, the method comprising: forming a first storage stack defining a first plane; and forming a second storage stack proximate to the first storage stack, wherein the second storage stack defines a second plane that is parallel to the first plane; wherein the first and second storage stacks are operable to transfer magnetic domains representing a plurality of bits between each other.
 24. The method of claim 23 further comprising: forming a first intermediate stack between the first storage stack and the second storage stack, wherein the first intermediate stack defines a third plane that is parallel to the second plane; wherein the first storage stack is operable to transfer the magnetic domains to the first intermediate stack; wherein the first intermediate stack is operable to transfer the magnetic domains to the second storage stack.
 25. The method of claim 24 further comprising: forming a second intermediate stack proximate to the second storage stack, wherein the second intermediate stack defines a fourth plane that is parallel to the second plane; and forming a third storage stack proximate to the second intermediate stack, wherein the third storage stack defines a fifth plane that is parallel to the fourth plane; wherein the second storage stack is operable to transfer the magnetic domains to the second intermediate stack; wherein the second intermediate stack is operable to transfer the magnetic domains to the third storage stack.
 26. The method of claim 23 further comprising: forming an overflow storage system operable to temporarily store the bits read from the first storage stack.
 27. The method of claim 23: wherein the step of forming a first storage stack comprises patterning the first storage stack into strips, wherein the locations of the strips correspond with the magnetic domains in the first storage stack; and wherein the step of forming a second storage stack comprises patterning the second storage stack into strips, wherein the locations of the strips correspond with the magnetic domains in the second storage stack, and wherein the strips of the second storage stack are substantially orthogonal to the strips of the first storage stack.
 28. The method of claim 27 wherein the widths of the strips of the first storage stack and the second storage stack correspond with a desired size of the magnetic domains.
 29. The method of claim 23 wherein the step of forming a first storage stack comprises: forming a first data storage layer; forming a heating layer proximate to the first data storage layer; and forming an insulating layer proximate to the heating layer.
 30. The method of claim 23 further comprising: forming a plurality of read elements and a plurality of write elements proximate to the first storage stack. 